IEEE

Electrical Characterization and Modeling of Amorphous ITO Field-effect Transistors

Abstract: This work systematically investigates the electrical properties and device physics in short-channel indium tin oxide (ITO) field-effect transistors (FETs). A $\mathbf{150-nm-channel-length}$ ...
IEEE

Self-Aligned Staggered Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors With Ultra-Low Contact Resistance for High-Speed Circuits Application

Abstract: A self-aligned (SA) staggered structure for amorphous-In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) is proposed. The bottom contact between n+-IGZO and source/drain (S/D) enables larger ...
IEEE

Synaptic Transistors Based on Electrospun Aligned Nanowire for Neuromorphic Computing

Abstract: The oxide thin-film transistor (OTFT) as a key component in integrated circuits, its performance optimization, and application expansion are essential. Among oxides, 1-D oxide semiconductors ...
IEEE

An Analytical Device Model for Vertical Channel-All-Around InGaZnO Thin-Film Transistors

Abstract: Vertical channel-all-around (CAA) thin-film transistors (TFTs) based on amorphous InGaZnO (a-IGZO) show significant potential for innovative dynamic random access memory (DRAM) integration ...
IEEE

Research Progress and Application of Fabric-Based Organic Electrochemical Transistors: A Review

Abstract: With the development of wearable electronic devices and flexible biosensing technology, organic electrochemical transistors (OECTs) have received more and more attention. Fabric-based OECTs ...
IEEE

Approach to High-Performance Indium Gallium Zinc Oxide Transistors by Thermal Atomic Layer Deposition

Abstract: Amorphous indium gallium zinc oxide (a-IGZO) thin films have been investigated to meet the high-resolution demands of augmented reality (AR) and virtual reality (VR) applications. In this ...
IEEE

Performance Enhancement of GaN Super-Lattice Castellated Field-Effect Transistors (SLCFETs) via Topside Integration of Near-Isotropic Polycrystalline Diamond

Abstract: We present the performance enhancement of GaN super-lattice castellated field-effect transistors (SLCFETs) following the integration of near-isotropic polycrystalline diamond (PCD) on top as ...