Separate two superconductors with a thin layer of material and something strange happens. Their superconductivity — a property driven by paired electrons that allows electricity to flow without energy ...

Abstract: Spin-transfer torque magnetic random-access memory (STT-MRAM) is a leading candidate for embedded nonvolatile memory (NVM) technologies. However, further improvements in energy efficiency ...

Researchers discovered a new mechanism for faster, more efficient magnetic domain wall motion using dual spin torques in cobalt-iridium-platinum multilayers. In spintronic memory, information is ...

A research team has taken a major step forward in the field of spintronics, a technology that uses not only the charge but also the spin of electrons to create faster, smarter, and more ...

Why it matters: A team of researchers spanning Taiwan and the United States have combined materials science, device engineering, and process compatibility to address one of the most stubborn ...

A diagram of the material developed using on-axis magnetron sputtering. By applying a current through the platinum material on top of the TmIG, researchers were able to reverse the magnetization ...

Advances in spintronics have led to the practical use of magnetoresistive random-access memory (MRAM), a non-volatile memory technology that supports energy-efficient semiconductor integrated circuits ...

Abstract: Spin-torque transfer magnetic random access memory (STT-MRAM) has emerged as a promising non-volatile memory (NVM) technology, featuring compelling advantages in scalability, speed, ...