Researchers developed a dual-modulated vertically stacked transistor that eliminates current leakage at nanoscale channel lengths, advancing low-power 3D chip integration.

Researchers developed a dual-modulated vertical transistor that suppresses leakage at nanoscale channels and supports ...

EPC claims its seventh-generation, 40-V power transistor delivers up to 3X better performance than equivalent silicon MOSFETs.

Tiny electronic devices, called microelectronics, may one day be printed as easily as words on a page, thanks to new research from scientists at the U.S. Department of Energy's (DOE) Argonne National ...

Accurately measuring small shifts in biological markers, like proteins and neurotransmitters, or harmful chemicals in the water supply can identify ...

A team of Chinese researchers has built a ferroelectric transistor with a gate length of just 1 nanometer that runs on 0.6 ...

Testing for failure with a multimeter is only partially effective, whereas a dedicated optocoupler testing circuit provides clear results in just seconds. For related tutorials and step-by-step build ...

Here is why gallium nitride (GaN) is the natural successor to silicon MOSFETs in the 100–650 V class of power devices.

AI data centers are starting to replace copper with co-packaged optics in an effort to reduce energy consumed per bit and ...

An archaic DieHard device has seemingly died hard; is hacking it to resurrect a portion of its original function a worthwhile endeavor?

AI workloads require rapid access to vast amounts of data, made possible by integrating HBMs. This approach, combining two, ...

The vacuum ultraviolet region is the area of the electromagnetic spectrum lying between X-rays and visible light. It is ...