IEEE

Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives

Abstract: We present a comprehensive review and outlook of silicon carbide (SiC) and gallium nitride (GaN) transistors available on the market for current and next-generation power electronics.
IEEE

Charge sensing using point-functionalized carbonnanotube transistors for single-molecule detection

Abstract: We have demonstrated that carbon-nanotube field-effect transistors act as highly sensitive single-molecule detectors when point functionalized. The hybridization kinetics of two ...
IEEE

Single-Transistor Impedance Matching Circuit for Over-Hundred-Octave Active Antennas

Abstract: In this article, a novel active impedance matching circuit with a single transistor is studied for antennas to cover over a hundred-octave bandwidth. In the proposed matching circuit, only ...
IEEE

Approach to High-Performance Indium Gallium Zinc Oxide Transistors by Thermal Atomic Layer Deposition

Abstract: Amorphous indium gallium zinc oxide (a-IGZO) thin films have been investigated to meet the high-resolution demands of augmented reality (AR) and virtual reality (VR) applications. In this ...
IEEE

The Transistor at 75: The past, present, and future of the modern world's most important invention

Abstract: Seventy-Five Years is a long time. It's so long that most of us don't remember a time before the transistor, and long enough for many engineers to have devoted entire careers to its use and ...
IEEE

Simplified Open-Loop Transfer Functions to Analyze Influential Parasitic Parameters for Oscillation Caused by Parallel Connected Transistors

Abstract: This study suggests a method to derive an approximate but sufficient formula of an open-loop transfer function for examining the oscillation seen for power devices connected in parallel. The ...
IEEE

Monolithic Complementary Field Effect Transistors (CFET) Demonstrated using Middle Dielectric Isolation and Stacked Contacts

Abstract: This work reports on the first demonstration of monolithic CFET CMOS co-integrating Middle Dielectric Isolation (MDI), Inner Spacers (ISP) and Stacked frontside patterned Contacts. The flow ...