Abstract: Two-transistor-zero-capacitor (2T0C) DRAM cell has been proposed and extensively investigated as a memory device for processing-in-memory (PIM) applications. In this two-part article, we ...
A research team led by Professor Jae Eun Jang and Dr. Goeun Pyo from the Department of Electrical Engineering and Computer ...
Researchers at Peking University have scaled the physical gate length of a ferroelectric transistor down to 1nm and propose a novel “nanogate ultra-low-power ferroelectric transistor” architecture. By ...
Abstract: We present a transistor model to describe the field effect current/voltage (${I}/{V}$ ) relationship in single-wall carbon nanotube thin film transistors (CNT TFTs). Based on the nature of ...
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