Researchers developed a dual-modulated vertically stacked transistor that eliminates current leakage at nanoscale channel lengths, advancing low-power 3D chip integration.

Logical circuits have been built from nanosheet stacks of various transistors, which could make electronic devices faster and more compact. Xiong Xiong is in the School of Integrated Circuits and the ...

Accurately measuring small shifts in biological markers, like proteins and neurotransmitters, or harmful chemicals in the ...

Testing for failure with a multimeter is only partially effective, whereas a dedicated optocoupler testing circuit provides clear results in just seconds. For related tutorials and step-by-step build ...

Tiny electronic devices, called microelectronics, may one day be printed as easily as words on a page, thanks to new research from scientists at the U.S. Department of Energy's (DOE) Argonne National ...

A team of Chinese researchers has built a ferroelectric transistor with a gate length of just 1 nanometer that runs on 0.6 ...

Iran’s attack this week on Qatar’s natural gas export facility threatens to disrupt not just world energy markets but also ...

This technical FAQ examines three modeling gaps identified in engineering literature and outlines algorithmic methods to address them.

Three separate research teams have reported techniques that directly attack one of the hardest problems in shrinking transistors and wiring below 10 nanometers: the sharp rise in electrical resistance ...

A team of international researchers have developed a breakthrough way to observe what is happening inside electronic chips while they are operating—without touching them, taking them apart, or ...

Researchers from Ulsan National Institute of Science and Technology (UNIST) designed a low power semiconductor circuit ...