A dual-gated graphene transistor designed to operate directly in liquid environments has achieved up to 20 times the signal ...

A team of Chinese researchers has built a ferroelectric transistor with a gate length of just 1 nanometer that runs on 0.6 ...

Yield loss is increasingly driven by molecular variability in thin films, interfaces, and contamination rather than visible ...

Engineers leverage both device-specific and tool-level data to identify a process “sweet spot.” Tight, frequent tool-to-tool ...

Abstract: This study presents a 6-bit step attenuator in 0.15 μm GaAs technology. The fabricated attenuator's minimum and maximum step attenuation are 0.5 dB and 16 dB, respectively. On attenuator ...

Fixing Grok 4.1 bias requires proven strategies to combat AI discrimination, ensuring fairness, transparency, and accountability in AI systems.

Researchers developed a dual-modulated vertically stacked transistor that eliminates current leakage at nanoscale channel ...

Researchers have developed a way to etch very tall, narrow finFETs, a type of transistor that forms a tall semiconductor 'fin' for the current to travel over. Smaller and faster has been the trend for ...

Projection mapping has the potential to create shared immersive experiences in exhibitions, commercial facilities, and public ...

Electrical distribution systems are characterized by dynamic operating conditions and complex network topologies, which pose ...

Here is why gallium nitride (GaN) is the natural successor to silicon MOSFETs in the 100–650 V class of power devices.