Samsung Electronics Co. is considering a shift toward multi-year contracts for memory chips, a much longer timeframe than is ...
Researchers developed a dual-modulated vertically stacked transistor that eliminates current leakage at nanoscale channel lengths, advancing low-power 3D chip integration.
Tech Xplore on MSN
Key transistor for next-generation 3D stacked semiconductors operates without current leakage
A research team led by Professor Jae Eun Jang and Dr. Goeun Pyo from the Department of Electrical Engineering and Computer Science at DGIST has developed "dual-modulated vertically stacked transistors ...
Researchers developed a dual-modulated vertical transistor that suppresses leakage at nanoscale channels and supports ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results