Abstract: To further scale the bit-cell area of the complementary field-effect transistor (CFET) 6T static random access memory (6T-SRAM), a novel double-side cross-coupled interconnect (DSCI) ...
This article outlines the design strategies currently used to address these bottlenecks, ranging from data center systolic ...
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While searching for new products on AliExpress, I came across the SayoDevice OSU O3C, which looks very similar to other macro ...
Abstract: This brief presents a novel compute-SRAM bitcell design capable of performing 1-bit digital multiplication for digital compute-in-memory (DCIM) macros. Unlike the conventional approach, ...