Impact of Cycling Induced Intercell Trapped Charge on Retention Charge Loss in 3-D NAND Flash Memory
Abstract: As the 3D NAND technology developing toward more and more stack layers, it is essential to shrink the gate length (Lg) and inter-gate space (Ls). However, one of key concerns of scaling ...
Abstract: In this research, a compact model is proposed for trap-assisted tunneling (TAT) currents in 3-D NAND flash memory during erase/write (EW) cycling. Using the trap spectroscopy by charge ...
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