Irvine, Calif.—Microsemi Corp. recently developed a high speed IGBT transistor line for welding, low to mid-power solar inverters, uninterruptible power supplies and industrial switch mode power ...

Insulated Gate Bipolar Transistors (IGBTs) have become pivotal components in modern power electronic systems, blending the high input impedance and fast switching capabilities of MOSFETs with the high ...

While many research efforts are underway to develop active devices that can function in the challenging terahertz spectrum, others are leapfrogging to try to get some devices operate into the ...

Gallium nitride (GaN) is an ideal material for applications requiring high switching speeds and minimal power losses. While ...

How many remote controls do you have in your home? Don’t you wish all these things were better integrated somehow, or that you could add remote control functionality to a random device? It’s a common ...

Engineers are unveiling an upgrade to the transistor laser that could be used to boost computer processor speeds - the formation of two stable energy states and the ability to switch between them ...

What are GaN HEMTs and why are they important? How GaN devices can handle kilowatt power conversion. Gallium-nitride (GaN) high electron mobility transistors (HEMTs) are a form of field-effect ...

Mitsubishi Electric’s new 2.0kV LV100 semiconductor device is based on its insulated-gate bipolar transistor (IGBT) technology and Relaxed Field of Cathode (RFC) diodes. It is designed for industrial ...

A new study represents a significant advance in topological transistors and beyond-CMOS electronics. First time that the topological state in a topological insulator has been switched on and off using ...