Trench-based silicon carbide power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) represent a dramatic improvement in the Figure of Merit (FOM) values of power conversion switching ...

In the late 1990s I was working for a company that manufactures sub-systems for tramways, subways and light rail car manufacturers. One day my boss tells me that one of our inverters, a 5 kW DC to ...

SiC MOSFETs are usually susceptible to damage as a result of short-circuiting events because of the fast switching speeds and low on-state resistance. 3 A team of researchers affiliated with the ...

Last time on Circuit VR, we looked at creating a very simple common emitter amplifier, but we didn’t talk about how to select the capacitor values, or much about why we wanted them. We are going to ...

Field-effect transistors based on carbon nanotubes have been shown to be faster and less energy consuming than their silicon counterparts. However, ensuring these advantages are maintained for ...

[Kevin Darrah] wanted to make a simple 3.3V regulator without using an integrated circuit. He wound up using two common NPN transistors and 4 1K resistors. The circuit isn’t going to beat out a cheap ...

Microprocessors in smartphones, computers, and data centers process information by manipulating electrons through solid semiconductors, but our brains have a different system. They rely on the ...