Trench-based silicon carbide power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) represent a dramatic improvement in the Figure of Merit (FOM) values of power conversion switching ...

This file type includes high resolution graphics and schematics when applicable. In some situations, it becomes necessary to drive a MOSFET (or IGBT) with a voltage that’s lower than its ...

For the PDF version of this article, click here. Protecting power transistors against overcurrent failure has always been a challenging issue in power circuit design. In order to protect against even ...

Silicon carbide (SiC) has proven to be the ideal material for high power and high voltage devices. However, it is extremely important that devices be reliable, and we are not only referring to ...

The MOSFET power switch is commonly the most vulnerable part of a new switched-mode high-power circuit. One threat for this device is exceeding the value of the maximum allowed pulse current. You ...

The reliability of typical SiC MOSFETs is degraded by increased On-resistance when its body diodes are bipolar energized [3] during reverse conduction operation [4]. Toshiba SiC MOSFETs alleviate this ...