An improved SPICE model has been developed by Fairchild engineers for the simulation of trench power devices using the BSIM3 MOSFET model. The new model architecture seeks to eliminate shortcomings in ...
Ikoma, Japan – Scientists from Nara Institute of Science and Technology (NAIST) used the mathematical method called automatic differentiation to find the optimal fit of experimental data up to four ...
High-voltage MOSFETs are indispensable components in power electronics, where they are required to manage substantial voltages with high efficiency and reliability ...
Philips has developed an advanced Mosfet compact model intended to provide a more accurate description of device behaviours for the 90nm, 65nm and 45nm process generations. Compact models are used as ...
Although electromechanical relays have historically been the primary load switch in most applications, MOSFETs have been encroaching on the relay's territory in recent years as technology advances ...
Application Note 7534 July 2004 A New PSPICE Electro-Thermal Subcircuit For Power MOSFETs Alain Laprade, Scott Pearson, Stan Benczkowski, Gary Dolny, Frank Wheatley Abstract An empirical self-heating ...
New technical paper titled “Bridging the Gap between Design and Simulation of Low-Voltage CMOS Circuits” from researchers at Federal University of Santa Catarina, Brazil. “This work proposes a truly ...
Figure 1 shows the analyzed MV 30mH inductor. It has been rated at the level of 10 A and is based on the nanocrystalline magnetic core. Double pulse test in the laboratory circuit diagram is shown in ...
Results that may be inaccessible to you are currently showing.
Hide inaccessible results