An improved SPICE model has been developed by Fairchild engineers for the simulation of trench power devices using the BSIM3 MOSFET model. The new model architecture seeks to eliminate shortcomings in ...
High-voltage MOSFETs are indispensable components in power electronics, where they are required to manage substantial voltages with high efficiency and reliability ...
Ikoma, Japan – Scientists from Nara Institute of Science and Technology (NAIST) used the mathematical method called automatic differentiation to find the optimal fit of experimental data up to four ...
New technical paper titled “Bridging the Gap between Design and Simulation of Low-Voltage CMOS Circuits” from researchers at Federal University of Santa Catarina, Brazil. “This work proposes a truly ...
Figure 1 shows the analyzed MV 30mH inductor. It has been rated at the level of 10 A and is based on the nanocrystalline magnetic core. Double pulse test in the laboratory circuit diagram is shown in ...
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